STH65N05 PDF and Equivalents Search

 

STH65N05 Specs and Replacement

Type Designator: STH65N05

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 180 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 65 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 550 nS

Cossⓘ - Output Capacitance: 950 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm

Package: TO218

STH65N05 substitution

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STH65N05 datasheet

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STH65N05

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STH65N05

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Detailed specifications: STH4N90 , STH4N90FI , STH55N10 , STH55N10FI , STH5N90 , STH5N90FI , STH60N10 , STH60N10FI , 2N60 , STH65N05FI , STH65N06 , STH65N06FI , STH6N100 , STH6N100FI , STH6NA80 , STH6NA80FI , STH75N06 .

History: IRF9640 | STH4N90FI | STH65N06

Keywords - STH65N05 MOSFET specs

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