STH65N05FI Datasheet and Replacement
Type Designator: STH65N05FI
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 37 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 550 nS
Cossⓘ - Output Capacitance: 950 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: ISOWATT218
STH65N05FI substitution
STH65N05FI Datasheet (PDF)
Datasheet: STH4N90FI , STH55N10 , STH55N10FI , STH5N90 , STH5N90FI , STH60N10 , STH60N10FI , STH65N05 , K2611 , STH65N06 , STH65N06FI , STH6N100 , STH6N100FI , STH6NA80 , STH6NA80FI , STH75N06 , STH75N06FI .
Keywords - STH65N05FI MOSFET datasheet
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