JCS12N65ST MOSFET. Datasheet pdf. Equivalent
Type Designator: JCS12N65ST
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 250 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 12 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 39 nC
Rise Time (tr): 133 nS
Drain-Source Capacitance (Cd): 175 pF
Maximum Drain-Source On-State Resistance (Rds): 0.78 Ohm
Package: TO-263
JCS12N65ST Transistor Equivalent Substitute - MOSFET Cross-Reference Search
JCS12N65ST Datasheet (PDF)
jcs12n65bt jcs12n65st jcs12n65ct jcs12n65ft.pdf
N R N-CHANNEL MOSFET JCS12N65T Package MAIN CHARACTERISTICS ID 12.0A VDSS 650 V Rdson-max 0.78 @Vgs=10V Qg-typ 39 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge
jcs12n65fei jcs12n65bei jcs12n65sei jcs12n65cei.pdf
N RN-CHANNEL MOSFET JCS12N65EI Package MAIN CHARACTERISTICS ID 12A VDSS 650V Rdson-max 0.9 Vgs=10V Qg-Typ 30nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LE
jcs12n65t.pdf
N RN-CHANNEL MOSFETJCS12N65T Package MAIN CHARACTERISTICS ID 12 A VDSS 650 V Rdson@Vgs=10V 0.78 Qg 39 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UPS FEA
jcs12n65f.pdf
N N- CHANNEL MOSFET RJCS12N65FC MAIN CHARACTERISTICS Package ID 12 A VDSS 650 V Rdson@Vgs=10V 0.52 Qg 30 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UPS
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: MP10N60EIS
