JCS160N08 MOSFET. Datasheet pdf. Equivalent
Type Designator: JCS160N08
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 250 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 160 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 133 nC
trⓘ - Rise Time: 186 nS
Cossⓘ - Output Capacitance: 585 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0058 Ohm
Package: TO-263
JCS160N08 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
JCS160N08 Datasheet (PDF)
jcs160n08.pdf
N N-CHANNEL MOSFET JCS160N08I Package MAIN CHARACTERISTICS ID 160A VDSS 80V Rdson-max - 5.8m (@Vgs=10V Qg-typ 133nC APPLICATIONS High power DC/DC DC/DC converters and switch mode power supplies DC motor control Automoti
jcs160n08i.pdf
N N-CHANNEL MOSFET JCS160N08I Package MAIN CHARACTERISTICS ID 160A VDSS 80V Rdson-max - 5.5m (@Vgs=10V Qg-typ 133nC APPLICATIONS High power DC/DC DC/DC converters and switch mode power supplies DC motor control Automoti
ajcs160n08i.pdf
N N-CHANNEL MOSFET AJCS160N08I Package MAIN CHARACTERISTICS ID 160A VDSS 80V Rdson-max - 5.5m (@Vgs=10V Qg-typ 133nC APPLICATIONS DC/DC High power DC/DC converters and switch mode power supplies DC motor control
jcs16n25vc jcs16n25rc jcs16n25cc.pdf
N RN-CHANNEL MOSFET JCS16N25C Package MAIN CHARACTERISTICS ID 16 A VDSS 250 V Rdson-max 0.30 @Vgs=10V Qg 9.5 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
