STH65N06FI Specs and Replacement
Type Designator: STH65N06FI
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 37 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 550 nS
Cossⓘ - Output Capacitance: 950 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: ISOWATT218
STH65N06FI substitution
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STH65N06FI datasheet
Detailed specifications: STH55N10FI , STH5N90 , STH5N90FI , STH60N10 , STH60N10FI , STH65N05 , STH65N05FI , STH65N06 , 75N75 , STH6N100 , STH6N100FI , STH6NA80 , STH6NA80FI , STH75N06 , STH75N06FI , STH7N90 , STH7N90FI .
History: STE90N25 | STH5N90 | STH55N10 | STH55N10FI
Keywords - STH65N06FI MOSFET specs
STH65N06FI cross reference
STH65N06FI equivalent finder
STH65N06FI pdf lookup
STH65N06FI substitution
STH65N06FI replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: STE90N25 | STH5N90 | STH55N10 | STH55N10FI
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