JCS20N65WH Datasheet. Specs and Replacement

Type Designator: JCS20N65WH

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 500 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 140 nS

Cossⓘ - Output Capacitance: 250 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm

Package: TO-247

JCS20N65WH substitution

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JCS20N65WH datasheet

 ..1. Size:826K  jilin sino
 jcs20n65fh jcs20n65wh.pdf pdf_icon

JCS20N65WH

N R N-CHANNEL MOSFET JCS20N65H MAIN CHARACTERISTICS Package ID 20A VDSS 650 V Rdson-max 0.5 @Vgs=10V Qg-typ 45nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply ... See More ⇒

 6.1. Size:806K  jilin sino
 jcs20n65fei.pdf pdf_icon

JCS20N65WH

N R N-CHANNEL MOSFET JCS20N65EI Package MAIN CHARACTERISTICS ID 20A VDSS 650V Rdson-max 0.42 Vgs=10V Qg-Typ 64.6nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LED power ... See More ⇒

 7.1. Size:1458K  jilin sino
 jcs20n60wh.pdf pdf_icon

JCS20N65WH

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 7.2. Size:1215K  jilin sino
 jcs20n60fh.pdf pdf_icon

JCS20N65WH

N R N-CHANNEL MOSFET JCS20N60FH Package MAIN CHARACTERISTICS ID 20A VDSS 600V Rdson-max 0.39 Vgs=10V Qg-Typ 50nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LE... See More ⇒

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Detailed specifications: JCS19N20C, JCS19N20F, JCS1N70TC, JCS1SN60RC, JCS1SN60TC, JCS1SN60VC, JCS20N60FH, JCS20N65FH, IRFB31N20D, JCS2N60CB, JCS2N60FB, JCS2N60MB, JCS2N60MF, JCS2N60MFB, JCS2N60RB, JCS2N60T, JCS2N60VB

Keywords - JCS20N65WH MOSFET specs

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