JCS2N60T MOSFET. Datasheet pdf. Equivalent
Type Designator: JCS2N60T
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 1.3 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 8.1 nC
trⓘ - Rise Time: 139 nS
Cossⓘ - Output Capacitance: 31 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
Package: TO-92
JCS2N60T Transistor Equivalent Substitute - MOSFET Cross-Reference Search
JCS2N60T Datasheet (PDF)
jcs2n60t jcs2n60v jcs2n60r jcs2n60c jcs2n60f.pdf
R JCS2N60C JCS2N60C MAIN CHARACTERISTICS Package ID 2.0 A VDSS 600 V Rdson-max5.0 Vgs=10V Qg-typ 8.1 nC APPLICATIONS l High efficiency switch l mode power supplies l l Electronic lamp ballasts l LED based on half bridge l LED power supplie FEATURES l Low gate c
jcs2n60t jcs2n60mf jcs2n60v jcs2n60r jcs2n60c jcs2n60f.pdf
R JCS2N60C JCS2N60C MAIN CHARACTERISTICS Package ID 2.0 A VDSS 600 V Rdson-max5.0 Vgs=10V Qg-typ 8.1 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LED power supplie FEATURES
jcs2n60t jcs2n60mf jcs2n60v jcs2n60r jcs2n60n jcs2n60c jcs2n60f.pdf
R JCS2N60C JCS2N60C MAIN CHARACTERISTICS Package ID 2.0 A VDSS 600 V Rdson-max5.0 Vgs=10V Qg-typ 8.1 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LED power supplie FEATURES
jcs2n60.pdf
N lSX:_W:WHe^vfSO{ RN-CHANNEL MOSFET JCS2N60 ;NSpe MAIN CHARACTERISTICS \ Package ID 2.0 A VDSS 600 V Rdson 5 @Vgs=10VQg 15.3 nC APPLICATIONS (u l High frequency switching
jcs2n60vb jcs2n60rb jcs2n60cb jcs2n60fb jcs2n60mb jcs2n60mfb.pdf
N RN-CHANNEL MOSFET JCS2N60B MAIN CHARACTERISTICS Package ID 2.0 A VDSS 600 V RdsonVgs=10V 4.5 -MAX Qg-TYP 5.9nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge
jcs2n60mb jcs2n60mfb.pdf
N RN-CHANNEL MOSFETJCS2N60MFB MAIN CHARACTERISTICS Package 2.0 A ID 600 V VDSS RdsonVgs=10V 5.0 6.0 nC Qg APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UPS
jcs2n60r jcs2n60v jcs2n60c jcs2n60f.pdf
N RN-CHANNEL MOSFET JCS2N60 MAIN CHARACTERISTICS Package ID 2.0 A VDSS 600 V Rdson-max 5 Vgs=10V Qg 15.3 nC APPLICATIONS High frequency switching mode power supply Electronic ballast UPS UPS FEATURES
jcs2n60f.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor JCS2N60FFEATURESLow gate chargeHigh speed switchingLow on-resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh frequency switching mode power supplyElectronic ballastUPSABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: CS1N50A1
