JCS2N65C Datasheet and Replacement
Type Designator: JCS2N65C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 54 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 145 nS
Cossⓘ - Output Capacitance: 31.2 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 5.5 Ohm
Package: TO-220C
JCS2N65C substitution
JCS2N65C Datasheet (PDF)
jcs2n65v jcs2n65r jcs2n65c jcs2n65f.pdf
N RN-CHANNEL MOSFET JCS2N65C MAIN CHARACTERISTICS Package ID 2.0 A VDSS 650 V Rdson_max5.5 Vgs=10V Qg-typ 8.4 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge
jcs2n65vb jcs2n65rb jcs2n65cb jcs2n65fb jcs2n65mb jcs2n65mfb.pdf
N RN-CHANNEL MOSFET JCS2N65B MAIN CHARACTERISTICS Package ID 2.0 A VDSS 650 V RdsonVgs=10V 5.0 -MAX Qg-typ 5.9 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge
jcs2n65e.pdf
N RN-CHANNEL MOSFET JCS2N65E Package MAIN CHARACTERISTICS ID 2A VDSS 650V Rdson-max 5.5 Vgs=10V Qg-Typ 6.7nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LED p
jcs2n65fc.pdf
N RN-CHANNEL MOSFET JCS2N65C MAIN CHARACTERISTICS Package ID 2.0 A VDSS 650 V Rdson_max5.5 Vgs=10V Qg-typ 8.4 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge
Datasheet: JCS2N60CB , JCS2N60FB , JCS2N60MB , JCS2N60MF , JCS2N60MFB , JCS2N60RB , JCS2N60T , JCS2N60VB , IRFB7545 , JCS2N65CB , JCS2N65F , JCS2N65FB , JCS2N65MB , JCS2N65MFB , JCS2N65R , JCS2N65RB , JCS2N65V .
Keywords - JCS2N65C MOSFET datasheet
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: NCE01P18L | WFP9N20
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