All MOSFET. JCS2N65R Datasheet

 

JCS2N65R Datasheet and Replacement


   Type Designator: JCS2N65R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 44 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 145 nS
   Cossⓘ - Output Capacitance: 31.2 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 5.5 Ohm
   Package: TO252
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JCS2N65R Datasheet (PDF)

 ..1. Size:1571K  jilin sino
 jcs2n65v jcs2n65r jcs2n65c jcs2n65f.pdf pdf_icon

JCS2N65R

N RN-CHANNEL MOSFET JCS2N65C MAIN CHARACTERISTICS Package ID 2.0 A VDSS 650 V Rdson_max5.5 Vgs=10V Qg-typ 8.4 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge

 0.1. Size:1225K  jilin sino
 jcs2n65vb jcs2n65rb jcs2n65cb jcs2n65fb jcs2n65mb jcs2n65mfb.pdf pdf_icon

JCS2N65R

N RN-CHANNEL MOSFET JCS2N65B MAIN CHARACTERISTICS Package ID 2.0 A VDSS 650 V RdsonVgs=10V 5.0 -MAX Qg-typ 5.9 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge

 7.1. Size:1161K  jilin sino
 jcs2n65e.pdf pdf_icon

JCS2N65R

N RN-CHANNEL MOSFET JCS2N65E Package MAIN CHARACTERISTICS ID 2A VDSS 650V Rdson-max 5.5 Vgs=10V Qg-Typ 6.7nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LED p

 7.2. Size:990K  jilin sino
 jcs2n65fc.pdf pdf_icon

JCS2N65R

N RN-CHANNEL MOSFET JCS2N65C MAIN CHARACTERISTICS Package ID 2.0 A VDSS 650 V Rdson_max5.5 Vgs=10V Qg-typ 8.4 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge

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History: FHP540A | WML11N80M3 | PSMN8R5-100ES | WMQ30DP03TS | IRF7807VPBF | PMCM650CUNE | STP85N3LH5

Keywords - JCS2N65R MOSFET datasheet

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