JCS2N65VB MOSFET. Datasheet pdf. Equivalent

   Type Designator: JCS2N65VB
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 44 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 1.9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 5.8 nC
   trⓘ - Rise Time: 145 nS
   Cossⓘ - Output Capacitance: 36 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
   Package: TO251

JCS2N65VB Transistor Equivalent Substitute - MOSFET Cross-Reference Search

JCS2N65VB Datasheet (PDF)

..1. Size:1225K jilin sino
jcs2n65vb jcs2n65rb jcs2n65cb jcs2n65fb jcs2n65mb jcs2n65mfb.pdf

N RN-CHANNEL MOSFET JCS2N65B MAIN CHARACTERISTICS Package ID 2.0 A VDSS 650 V RdsonVgs=10V 5.0 -MAX Qg-typ 5.9 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge

6.1. Size:1571K jilin sino
jcs2n65v jcs2n65r jcs2n65c jcs2n65f.pdf

N RN-CHANNEL MOSFET JCS2N65C MAIN CHARACTERISTICS Package ID 2.0 A VDSS 650 V Rdson_max5.5 Vgs=10V Qg-typ 8.4 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge

7.1. Size:1161K jilin sino
jcs2n65e.pdf

N RN-CHANNEL MOSFET JCS2N65E Package MAIN CHARACTERISTICS ID 2A VDSS 650V Rdson-max 5.5 Vgs=10V Qg-Typ 6.7nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LED p

7.2. Size:990K jilin sino
jcs2n65fc.pdf

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: STT03N10

LIST

Last Update

All MOSFET. JCS2N65VB Datasheet

JCS2N65VB MOSFET. Datasheet pdf. Equivalent

JCS2N65VB Datasheet (PDF)

LIST

Last Update

AllTransistors(C)2015