STH6NA80 PDF and Equivalents Search

 

STH6NA80 Specs and Replacement

Type Designator: STH6NA80

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 5.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 100 nS

Cossⓘ - Output Capacitance: 140 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.4 Ohm

Package: TO218

STH6NA80 substitution

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STH6NA80 datasheet

 ..1. Size:346K  1
 sth6na80 sth6na80fi.pdf pdf_icon

STH6NA80

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 9.1. Size:706K  st
 sth6n95k5-2.pdf pdf_icon

STH6NA80

STH6N95K5-2 N-channel 950 V, 1 typ., 6 A MDmesh K5 Power MOSFET in a H PAK-2 package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOT STH6N95K5-2 950 V 1.25 6 A 110 W Industry s lowest R x area DS(on) Industry s best figure of merit (FoM) Ultra low gate charge 100% avalanche tested Zener-protected Applicati... See More ⇒

 9.2. Size:365K  st
 sth6n100.pdf pdf_icon

STH6NA80

STH6N100 STH6N100FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STH6N100 1000 V ... See More ⇒

Detailed specifications: STH60N10 , STH60N10FI , STH65N05 , STH65N05FI , STH65N06 , STH65N06FI , STH6N100 , STH6N100FI , STP65NF06 , STH6NA80FI , STH75N06 , STH75N06FI , STH7N90 , STH7N90FI , STH7NA60 , STH7NA60FI , STH7NA80 .

History: STH6NA80FI

Keywords - STH6NA80 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 


 
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