STH6NA80 Datasheet and Replacement
Type Designator: STH6NA80
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 5.4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 100 nS
Cossⓘ - Output Capacitance: 140 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.4 Ohm
Package: TO218
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STH6NA80 Datasheet (PDF)
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History: IRFBG20 | TK2P60D | DMN2300UFB4 | DMN60H3D5SK3 | RTF020P02TL | DMP2104LP
Keywords - STH6NA80 MOSFET datasheet
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History: IRFBG20 | TK2P60D | DMN2300UFB4 | DMN60H3D5SK3 | RTF020P02TL | DMP2104LP
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