All MOSFET. STH6NA80 Datasheet

 

STH6NA80 MOSFET. Datasheet pdf. Equivalent


   Type Designator: STH6NA80
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.75 V
   |Id|ⓘ - Maximum Drain Current: 5.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 55 nC
   trⓘ - Rise Time: 100 nS
   Cossⓘ - Output Capacitance: 140 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.4 Ohm
   Package: TO218

 STH6NA80 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STH6NA80 Datasheet (PDF)

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 sth6na80 sth6na80fi.pdf

STH6NA80 STH6NA80

 9.1. Size:706K  st
 sth6n95k5-2.pdf

STH6NA80 STH6NA80

STH6N95K5-2 N-channel 950 V, 1 typ., 6 A MDmesh K5 Power MOSFET in a HPAK-2 package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOTSTH6N95K5-2 950 V 1.25 6 A 110 W Industrys lowest R x area DS(on) Industrys best figure of merit (FoM) Ultra low gate charge 100% avalanche tested Zener-protected Applicati

 9.2. Size:365K  st
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STH6NA80 STH6NA80

STH6N100STH6N100FIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTH6N100 1000 V

Datasheet: STH60N10 , STH60N10FI , STH65N05 , STH65N05FI , STH65N06 , STH65N06FI , STH6N100 , STH6N100FI , IRF520 , STH6NA80FI , STH75N06 , STH75N06FI , STH7N90 , STH7N90FI , STH7NA60 , STH7NA60FI , STH7NA80 .

 

 
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