STH6NA80 Datasheet and Replacement

   Type Designator: STH6NA80
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.75 V
   |Id| ⓘ - Maximum Drain Current: 5.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 55 nC
   tr ⓘ - Rise Time: 100 nS
   Cossⓘ - Output Capacitance: 140 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.4 Ohm
   Package: TO218
     - MOSFET ⓘ Cross-Reference Search