STH75N06 PDF and Equivalents Search

 

STH75N06 Specs and Replacement

Type Designator: STH75N06

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 200 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 75 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 900 nS

Cossⓘ - Output Capacitance: 1800 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm

Package: TO218

STH75N06 substitution

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STH75N06 datasheet

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STH75N06

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Detailed specifications: STH65N05 , STH65N05FI , STH65N06 , STH65N06FI , STH6N100 , STH6N100FI , STH6NA80 , STH6NA80FI , 7N60 , STH75N06FI , STH7N90 , STH7N90FI , STH7NA60 , STH7NA60FI , STH7NA80 , STH7NA80FI , STH80N05 .

Keywords - STH75N06 MOSFET specs

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