JCS4N70B Datasheet: MOSFET, N-Ch, 700V, 4A. Full specification with pinout and replacement list

JCS4N70B Datasheet. Specs and Replacement

Type Designator: JCS4N70B

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 65 nS

Cossⓘ - Output Capacitance: 67 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.8 Ohm

Package: TO-262

JCS4N70B substitution

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JCS4N70B datasheet

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N R N-CHANNEL MOSFET JCS4N70C Package MAIN CHARACTERISTICS ID 4.0 A VDSS 700 V Rdson-max 2.8 @Vgs=10V Qg-typ 16nC APPLICATIONS High frequency switching mode power supply UPS Electronic ballast UPS T0-251N-S2 FEA... See More ⇒

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N R N-CHANNEL MOSFET JCS4N70C Package MAIN CHARACTERISTICS ID 4.0 A 700 V VDSS Rdson-max 2.8 Vgs=10V 16nC Qg-Typ APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge ... See More ⇒

9.1. Size:1019K 1
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N R N-CHANNEL MOSFET JCS4N60B Package MAIN CHARACTERISTICS 4.0 A ID 600 V VDSS Rdson Vgs=10V 2.4 13.3nC Qg APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UPS ... See More ⇒

9.2. Size:1045K jilin sino
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N R N-CHANNEL MOSFET JCS4N60B Package MAIN CHARACTERISTICS ID 4.0 A VDSS 600 V 2.4 Rdson Vgs=10V Qg 18.1nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LED power su... See More ⇒