All MOSFET. JCS4N80CH Datasheet

 

JCS4N80CH Datasheet and Replacement


   Type Designator: JCS4N80CH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 85 nS
   Cossⓘ - Output Capacitance: 105 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
   Package: TO-220C
 

 JCS4N80CH substitution

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JCS4N80CH Datasheet (PDF)

 ..1. Size:1321K  jilin sino
 jcs4n80ch jcs4n80fh.pdf pdf_icon

JCS4N80CH

N RN-CHANNEL MOSFET JCS4N80H Package MAIN CHARACTERISTICS ID 4 A VDSS 800 V Rdson-max 2.5 @Vgs=10V Qg-typ 14nC APPLICATIONS High frequency switch mode power supply Electronic ballasts LED LED power supply

 6.1. Size:3308K  jilin sino
 jcs4n80v jcs4n80r jcs4n80f jcs4n80c jcs4n80b jcs4n80s.pdf pdf_icon

JCS4N80CH

N RN-CHANNEL MOSFET JCS4N80C Package MAIN CHARACTERISTICS 4A ID 800 V VDSS Rdson-max 2.6 @Vgs=10VQg-typ 29.5nC APPLICATIONS Switched mode power suppliesy Electronic ballast FEATURES Low gate charge

 6.2. Size:1170K  jilin sino
 jcs4n80v jcs4n80r jcs4n80f jcs4n80c jcs4n80b.pdf pdf_icon

JCS4N80CH

N R N-CHANNEL MOSFET JCS4N80C Package MAIN CHARACTERISTICS 4A ID 800 V VDSS Rdson-max 2.6 @Vgs=10VQg-typ 29.5nC APPLICATIONS Switched mode power suppliesy Electronic ballast FEATURES Low gate charge

 6.3. Size:1385K  jilin sino
 jcs4n80v jcs4n80r jcs4n80f jcs4n80c jcs4n80s jcs4n80b.pdf pdf_icon

JCS4N80CH

N RN-CHANNEL MOSFET JCS4N80C Package MAIN CHARACTERISTICS 4A ID 800 V VDSS Rdson-max 2.6 @Vgs=10VQg-typ 29.5nC APPLICATIONS Switched mode power suppliesy Electronic ballast FEATURES Low gate charge

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History: UPA2755GR

Keywords - JCS4N80CH MOSFET datasheet

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