JCS50N20WT MOSFET. Datasheet pdf. Equivalent
Type Designator: JCS50N20WT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 277 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 50 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 90 nC
trⓘ - Rise Time: 501 nS
Cossⓘ - Output Capacitance: 672 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
Package: TO-247
JCS50N20WT Transistor Equivalent Substitute - MOSFET Cross-Reference Search
JCS50N20WT Datasheet (PDF)
jcs50n20wt jcs50n20abt.pdf
R JCS50N20T JCS50N20T Package MAIN CHARACTERISTICS ID 50A VDSS 200 V Rdson-max 50m @Vgs=10V Qg-typ 90nC APPLICATIONS High frequency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UPS FEATURES
jcs50n06vh jcs50n06rh jcs50n06ch jcs50n06fh.pdf
N RN-CHANNEL MOSFET JCS50N06H Package MAIN CHARACTERISTICS ID 50 A VDSS 60 V Rdson-max 23 m @Vgs=10V Qg-typ 34 nC APPLICATIONS High frequency switch UPS mode power supplies UPS FEATURES Low gate charge
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
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