All MOSFET. JCS5N50VC Datasheet

 

JCS5N50VC Datasheet and Replacement


   Type Designator: JCS5N50VC
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 91 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 14 nC
   trⓘ - Rise Time: 26 nS
   Cossⓘ - Output Capacitance: 53 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.45 Ohm
   Package: TO251
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JCS5N50VC Datasheet (PDF)

 ..1. Size:2342K  jilin sino
 jcs5n50vc jcs5n50rc jcs5n50cc jcs5n50fc.pdf pdf_icon

JCS5N50VC

N RN-CHANNEL MOSFET JCS5N50C Package MAIN CHARACTERISTICS 5 A ID 500 V VDSS RdsonVgs=10V 1.45 14nC Qg APPLICATIONS High frequency switching mode power supply UPS Electronic ballast UPS FEATURES

 6.1. Size:2112K  jilin sino
 jcs5n50vt jcs5n50rt jcs5n50ct jcs5n50ft.pdf pdf_icon

JCS5N50VC

N RN-CHANNEL MOSFET JCS5N50T Package MAIN CHARACTERISTICS 5 A ID 500 V VDSS Rdson-max 1.6 @Vgs=10V 15 nC Qg-typ APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge

 7.1. Size:1627K  jilin sino
 jcs5n50.pdf pdf_icon

JCS5N50VC

N lSX:_W:WHe^vfSO{RN-CHANNEL MOSFETJCS5N50T \ Package ;NSpe MAIN CHARACTERISTICS ID 5 A VDSS 500 V Rdson@Vgs=10V 1.6&! Qg 15 nC APPLICATIONS (u High efficiency switch _sQ5un

 9.1. Size:897K  jilin sino
 jcs5n60v jcs5n60r jcs5n60c jcs5n60f.pdf pdf_icon

JCS5N50VC

N RN-CHANNEL MOSFET JCS5N60C Package MAIN CHARACTERISTICS ID 4.0 A VDSS 600 V RdsonVgs=10V 2.5 Qg 9nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply FEATURES

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History: CHM85A3PAGP

Keywords - JCS5N50VC MOSFET datasheet

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