All MOSFET. JCS630BA Datasheet

 

JCS630BA Datasheet and Replacement


   Type Designator: JCS630BA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 72 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 70 nS
   Cossⓘ - Output Capacitance: 85 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: TO-262
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JCS630BA Datasheet (PDF)

 ..1. Size:2285K  jilin sino
 jcs630va jcs630ra jcs630va jcs630ba jcs630sa jcs630fa jcs630ca.pdf pdf_icon

JCS630BA

N N- CHANNEL MOSFET R JCS630A MAIN CHARACTERISTICS Package ID 9.0A VDSS 200 V Rdson-max 0.4 @Vgs=10V Qg-typ 22nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge

 ..2. Size:1941K  jilin sino
 jcs630va jcs630ra jcs630ba jcs630sa jcs630ca jcs630fa.pdf pdf_icon

JCS630BA

N N- CHANNEL MOSFET R JCS630A MAIN CHARACTERISTICS Package ID 9.0A VDSS 200 V Rdson-max 0.4 @Vgs=10V Qg-typ 22nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge

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History: RF1S45N06LESM | HLML6401 | SI3424CDV | SPA12N50C3 | TK40A10K3 | CM1N60C | AP85T03GH-HF

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