STH7NA80 MOSFET. Datasheet pdf. Equivalent
Type Designator: STH7NA80
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.75 V
|Id|ⓘ - Maximum Drain Current: 6.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 58 nC
trⓘ - Rise Time: 95 nS
Cossⓘ - Output Capacitance: 160 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.9 Ohm
Package: TO218
STH7NA80 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STH7NA80 Datasheet (PDF)
sth7na80fi stw7na80.pdf
STW7NA80STH7NA80FI N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTW7NA80 800 V
sth7na90fi stw7na90.pdf
STW7NA90STH7NA90FI N - CHANNEL 900V - 1.05 - 7A - TO-247/ISOWATT218FAST POWER MOSFETTYPE VDSS RDS(on) IDSTW7NA90 900 V
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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