JCS7HN60S Datasheet and Replacement
Type Designator: JCS7HN60S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 120 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 251 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.3 Ohm
Package: TO-263
JCS7HN60S substitution
JCS7HN60S Datasheet (PDF)
jcs7hn60v jcs7hn60r jcs7hn60b jcs7hn60s jcs7hn60c jcs7hn60f.pdf
N RN-CHANNEL MOSFET JCS7HN60C MAIN CHARACTERISTICS Package ID 7.0 A VDSS 600 V Rdson-max 1.3 @Vgs=10V Qg-typ 32 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply
jcs7hn65v jcs7hn65r jcs7hn65b jcs7hn65s jcs7hn65c jcs7hn65f.pdf
N RN-CHANNEL MOSFET JCS7HN65C MAIN CHARACTERISTICS Package ID 7.0 A VDSS 650 V Rdson-max Typ 1.05 Vgs=10V Max 1.35 Qg-typ 32 nC APPLICATIONS High frequency switching mode power supply LED Electronic ballast LED po
Datasheet: JCS730S , JCS730SC , JCS730V , JCS730VC , JCS7HN60B , JCS7HN60C , JCS7HN60F , JCS7HN60R , IRF740 , JCS7HN60V , JCS7HN65B , JCS7HN65C , JCS7HN65F , JCS7HN65R , JCS7HN65S , JCS7HN65V , JCS7N60BB .
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