JCS7HN60S Datasheet. Specs and Replacement

Type Designator: JCS7HN60S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 120 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 251 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.3 Ohm

Package: TO-263

JCS7HN60S substitution

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JCS7HN60S datasheet

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Detailed specifications: JCS730S, JCS730SC, JCS730V, JCS730VC, JCS7HN60B, JCS7HN60C, JCS7HN60F, JCS7HN60R, IRF740, JCS7HN60V, JCS7HN65B, JCS7HN65C, JCS7HN65F, JCS7HN65R, JCS7HN65S, JCS7HN65V, JCS7N60BB

Keywords - JCS7HN60S MOSFET specs

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