All MOSFET. JCS7HN65S Datasheet

 

JCS7HN65S Datasheet and Replacement


   Type Designator: JCS7HN65S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 120 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 251 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.35 Ohm
   Package: TO-263
 

 JCS7HN65S substitution

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JCS7HN65S Datasheet (PDF)

 ..1. Size:1900K  jilin sino
 jcs7hn65v jcs7hn65r jcs7hn65b jcs7hn65s jcs7hn65c jcs7hn65f.pdf pdf_icon

JCS7HN65S

N RN-CHANNEL MOSFET JCS7HN65C MAIN CHARACTERISTICS Package ID 7.0 A VDSS 650 V Rdson-max Typ 1.05 Vgs=10V Max 1.35 Qg-typ 32 nC APPLICATIONS High frequency switching mode power supply LED Electronic ballast LED po

 7.1. Size:1818K  jilin sino
 jcs7hn60v jcs7hn60r jcs7hn60b jcs7hn60s jcs7hn60c jcs7hn60f.pdf pdf_icon

JCS7HN65S

N RN-CHANNEL MOSFET JCS7HN60C MAIN CHARACTERISTICS Package ID 7.0 A VDSS 600 V Rdson-max 1.3 @Vgs=10V Qg-typ 32 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply

Datasheet: JCS7HN60F , JCS7HN60R , JCS7HN60S , JCS7HN60V , JCS7HN65B , JCS7HN65C , JCS7HN65F , JCS7HN65R , IRF640 , JCS7HN65V , JCS7N60BB , JCS7N60CB , JCS7N60FB , JCS7N60SB , JCS7N65BB , JCS7N65SB , JCS7N80BH .

History: DMNH10H028SPSQ-13 | JCS7N60CB

Keywords - JCS7HN65S MOSFET datasheet

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