All MOSFET. JCS7N60CB Datasheet

 

JCS7N60CB Datasheet and Replacement


   Type Designator: JCS7N60CB
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 142 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 80 nS
   Cossⓘ - Output Capacitance: 115 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: TO-220C
      - MOSFET Cross-Reference Search

 

JCS7N60CB Datasheet (PDF)

 ..1. Size:904K  jilin sino
 jcs7n60bb jcs7n60sb jcs7n60cb jcs7n60fb.pdf pdf_icon

JCS7N60CB

N RN-CHANNEL MOSFET JCS7N60B MAIN CHARACTERISTICS Package ID 7.0 A VDSS 600 V Rdson-max 1.2 @Vgs=10V Qg-typ 25 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge L

 6.1. Size:755K  jilin sino
 jcs7n60s jcs7n60b jcs7n60c jcs7n60f.pdf pdf_icon

JCS7N60CB

N lSX:_W:WHe^vfSO{RN-CHANNEL MOSFETJCS7N60 \ Package ;NSpe MAIN CHARACTERISTICS ID 7.0 A 600 V VDSS 1.2 &! Rdson@Vgs=10V54 nC Qg APPLICATIONS (u High efficiency switch

 6.2. Size:1774K  jilin sino
 jcs7n60v jcs7n60r jcs7n60f jcs7n60c jcs7n60b jcs7n60s.pdf pdf_icon

JCS7N60CB

N RN-CHANNEL MOSFET JCS7N60E MAIN CHARACTERISTICS Package ID 7.0 A VDSS 600 V Rdson-max1.0 @Vgs=10V Qg-typ 23 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply

 8.1. Size:600K  jilin sino
 jcs7n65.pdf pdf_icon

JCS7N60CB

N lSX:_W:WHe^vfSO{RN-CHANNEL MOSFETJCS7N65B ;NSpe MAIN CHARACTERISTICS \ Package ID 7.0 A 650 V VDSS 1.3 &! Rdson@Vgs=10V25 nC Qg APPLICATIONS (u High efficiency switch

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Keywords - JCS7N60CB MOSFET datasheet

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