JCS8N60BC Datasheet. Specs and Replacement

Type Designator: JCS8N60BC

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 120 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 125 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm

Package: TO-262

JCS8N60BC substitution

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JCS8N60BC datasheet

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 jcs8n60vc jcs8n60rc jcs8n60bc jcs8n60sc jcs8n60cc jcs8n60fc.pdf pdf_icon

JCS8N60BC

N R N-CHANNEL MOSFET JCS8N60C Package MAIN CHARACTERISTICS ID 7.0 A VDSS 600 V Rdson 1.6 @Vgs=10V Qg 32 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply FEATU... See More ⇒

 6.1. Size:616K  1
 jcs8n60s jcs8n60b jcs8n60c jcs8n60f.pdf pdf_icon

JCS8N60BC

N R N-CHANNEL MOSFET JCS8N60 Package MAIN CHARACTERISTICS 7.5 A ID 600 V VDSS Rdson 1.2 @Vgs=10V 54 nC Qg APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UPS FEA... See More ⇒

 6.2. Size:809K  jilin sino
 jcs8n60bb jcs8n60sb jcs8n60cb jcs8n60fb.pdf pdf_icon

JCS8N60BC

N R N-CHANNEL MOSFET JCS8N60B MAIN CHARACTERISTICS Package ID 7.0 A VDSS 600 V Rdson-max 1.2 @Vgs=10V Qg-typ 25 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge L... See More ⇒

 7.1. Size:837K  jilin sino
 jcs8n60f.pdf pdf_icon

JCS8N60BC

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Detailed specifications: JCS7N65BB, JCS7N65SB, JCS7N80BH, JCS7N80CH, JCS7N80FH, JCS7N80SH, JCS88N75I, JCS8N60BB, 2N7000, JCS8N60CB, JCS8N60CC, JCS8N60FB, JCS8N60FC, JCS8N60RC, JCS8N60SB, JCS8N60SC, JCS8N60VC

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