JCS8N65V Datasheet and Replacement
Type Designator: JCS8N65V
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 120 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 251 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.35 Ohm
Package: TO251
JCS8N65V substitution
JCS8N65V Datasheet (PDF)
jcs8n65v jcs8n65r jcs8n65c jcs8n65f jcs8n65s jcs8n65b.pdf

N RN-CHANNEL MOSFET JCS8N65C MAIN CHARACTERISTICS Package 88888888 8ID .0 A VDSS 650 V Rdson-max1.35 @Vgs=10V Qg-typ 32 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED
jcs8n60s jcs8n60b jcs8n60c jcs8n60f.pdf

N RN-CHANNEL MOSFETJCS8N60 Package MAIN CHARACTERISTICS 7.5 A ID 600 V VDSS Rdson 1.2 @Vgs=10V 54 nC Qg APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UPS FEA
jcs8n60vc jcs8n60rc jcs8n60bc jcs8n60sc jcs8n60cc jcs8n60fc.pdf

N RN-CHANNEL MOSFET JCS8N60C Package MAIN CHARACTERISTICS ID 7.0 A VDSS 600 V Rdson 1.6 @Vgs=10VQg 32 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply FEATU
jcs8n60bb jcs8n60sb jcs8n60cb jcs8n60fb.pdf

N RN-CHANNEL MOSFET JCS8N60B MAIN CHARACTERISTICS Package ID 7.0 A VDSS 600 V Rdson-max 1.2 @Vgs=10V Qg-typ 25 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge L
Datasheet: JCS8N60SB , JCS8N60SC , JCS8N60VC , JCS8N65B , JCS8N65C , JCS8N65F , JCS8N65R , JCS8N65S , AO3400 , JCS9N50CC , JCS9N50CT , JCS9N50FC , JCS9N50FT , JCS9N50RC , JCS9N50VC , JCS9N90ABT , JCS9N90BT .
History: AMA461P | IRFS630B | SML10026DFN
Keywords - JCS8N65V MOSFET datasheet
JCS8N65V cross reference
JCS8N65V equivalent finder
JCS8N65V lookup
JCS8N65V substitution
JCS8N65V replacement
History: AMA461P | IRFS630B | SML10026DFN



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