All MOSFET. JCS9N50VC Datasheet

 

JCS9N50VC Datasheet and Replacement


   Type Designator: JCS9N50VC
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 29 nC
   trⓘ - Rise Time: 53 nS
   Cossⓘ - Output Capacitance: 155 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm
   Package: TO251
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JCS9N50VC Datasheet (PDF)

 ..1. Size:2116K  jilin sino
 jcs9n50vc jcs9n50rc jcs9n50cc jcs9n50fc.pdf pdf_icon

JCS9N50VC

N RN-CHANNEL MOSFET JCS9N50C Package MAIN CHARACTERISTICS ID 9 A VDSS 500 V Rdson-max 0.75 @Vgs=10V Qg-typ 29 nC APPLICATIONS High frequency switching mode power supply Electronic ballast UPS UPS FEATURE

 7.1. Size:1721K  jilin sino
 jcs9n50ct jcs9n50ft.pdf pdf_icon

JCS9N50VC

N RN-CHANNEL MOSFET JCS9N50T Package MAIN CHARACTERISTICS ID 9 A VDSS 500 V Rdson-max 0.75 @Vgs=10V Qg-typ 29 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge

 9.1. Size:527K  jilin sino
 jcs9n95fa jcs9n95ca jcs9n95wa.pdf pdf_icon

JCS9N50VC

N RN-CHANNEL MOSFET JCS9N95A MAIN CHARACTERISTICS Package ID 9.0 A VDSS 950 V RdsonVgs=10V 1.3 -MAX Qg-Typ 39.92 APPLICATIONS High efficiency switch mode . power supplies Electronic lamp ballasts based on half bridge LED power supplie

 9.2. Size:1487K  jilin sino
 jcs9n90ft jcs9n90wt jcs9n90abt jcs9n90bt.pdf pdf_icon

JCS9N50VC

N RN-CHANNEL MOSFET JCS9N90T Package MAIN CHARACTERISTICS ID 9 A VDSS 900 V Rdson-Max 1.35 Vgs=10V Qg 43 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LED

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History: AON6508 | HLML6401

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