KNP2915A
MOSFET. Datasheet pdf. Equivalent
Type Designator: KNP2915A
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 428
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5
V
|Id|ⓘ - Maximum Drain Current: 130
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 70
nC
trⓘ - Rise Time: 92
nS
Cossⓘ -
Output Capacitance: 330
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.015
Ohm
Package:
TO220
KNP2915A
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
KNP2915A
Datasheet (PDF)
..1. Size:334K kia
knp2915a.pdf
130A150VN-CHANNELMOSFET KNX2915AKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1. Features RDS(ON)=10m( typ.)@VGS=10V Uses CRM(CQ) advancedTrench technology Extremely lowon-resistance RDS(on) Excellent QgxRDS(on) product(FOM) Qualified according to JEDECcriteria2. Application Motor control and drive Battery management UPS(UninterrupiblePower Supplies)
..2. Size:429K kia
knp2915a knb2915a.pdf
130A150VN-CHANNEL MOSFET KNX2915AKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1. Features RDS(ON)= 10m( typ.)@ VGS=10V Uses CRM(CQ) advanced Trench technology Extremely low on-resistance RDS(on) Excellent QgxRDS(on) product(FOM) Qualified according to JEDEC criteria2. Application Motor control and drive Battery management UPS
8.1. Size:341K kia
knb2910a knp2910a knh2910a.pdf
130A100VKNX2910AN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.Applications High efficiency synchronous rectification in SMPS High speed power switching2. Features R =5.0m @V =10 VDS(on) GSSuper high dense cell design Ultra lowOn-Resistance 100%avalanchetested Lead Free and Green devices available (RoHSCompliant)3. Pinconfiguratio
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