STH9NA60 PDF and Equivalents Search

 

STH9NA60 Specs and Replacement

Type Designator: STH9NA60

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 160 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 5.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.75 V

Qg ⓘ - Total Gate Charge: 75 nC

tr ⓘ - Rise Time: 32 nS

Cossⓘ - Output Capacitance: 230 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm

Package: TO218

STH9NA60 substitution

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STH9NA60 datasheet

 0.1. Size:130K  st
 sth9na60fi.pdf pdf_icon

STH9NA60

STW9NA60 STH9NA60FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STW9NA60 600 V ... See More ⇒

 8.1. Size:133K  st
 sth9na80fi.pdf pdf_icon

STH9NA60

STW9NA80 STH9NA80FI N - CHANNEL 800V - 0.85 - 9.1A - TO-247/ISOWATT218 FAST POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STW9NA80 800 V ... See More ⇒

 8.2. Size:147K  njs
 sth9na80fi stw9na80.pdf pdf_icon

STH9NA60

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Detailed specifications: STH80N05 , STH80N05FI , STH8N80 , STH8N80FI , STH8NA60 , STH8NA60FI , STH9N80 , STH9N80FI , AO4468 , STHV102 , STHV102FI , STHV82 , STHV82FI , STK12N05L , STK12N06L , STK14N05 , STK14N06 .

Keywords - STH9NA60 MOSFET specs

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 STH9NA60 equivalent finder
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