STH9NA60 Datasheet and Replacement
Type Designator: STH9NA60
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 160 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 5.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 32 nS
Cossⓘ - Output Capacitance: 230 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
Package: TO218
STH9NA60 substitution
STH9NA60 Datasheet (PDF)
sth9na60fi.pdf
STW9NA60STH9NA60FI N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTW9NA60 600 V
sth9na80fi.pdf
STW9NA80STH9NA80FI N - CHANNEL 800V - 0.85 - 9.1A - TO-247/ISOWATT218FAST POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTW9NA80 800 V
Datasheet: STH80N05 , STH80N05FI , STH8N80 , STH8N80FI , STH8NA60 , STH8NA60FI , STH9N80 , STH9N80FI , IRF730 , STHV102 , STHV102FI , STHV82 , STHV82FI , STK12N05L , STK12N06L , STK14N05 , STK14N06 .
History: SVF740T | SUN82A20CI | GSM2301A
Keywords - STH9NA60 MOSFET datasheet
STH9NA60 cross reference
STH9NA60 equivalent finder
STH9NA60 lookup
STH9NA60 substitution
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History: SVF740T | SUN82A20CI | GSM2301A
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