All MOSFET. STH9NA60 Datasheet

 

STH9NA60 MOSFET. Datasheet pdf. Equivalent


   Type Designator: STH9NA60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 160 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.75 V
   |Id|ⓘ - Maximum Drain Current: 5.1 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 75 nC
   trⓘ - Rise Time: 32 nS
   Cossⓘ - Output Capacitance: 230 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
   Package: TO218

 STH9NA60 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STH9NA60 Datasheet (PDF)

 0.1. Size:130K  st
 sth9na60fi.pdf

STH9NA60 STH9NA60

STW9NA60STH9NA60FI N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTW9NA60 600 V

 8.1. Size:133K  st
 sth9na80fi.pdf

STH9NA60 STH9NA60

STW9NA80STH9NA80FI N - CHANNEL 800V - 0.85 - 9.1A - TO-247/ISOWATT218FAST POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTW9NA80 800 V

 8.2. Size:147K  njs
 sth9na80fi stw9na80.pdf

STH9NA60 STH9NA60

Datasheet: STH80N05 , STH80N05FI , STH8N80 , STH8N80FI , STH8NA60 , STH8NA60FI , STH9N80 , STH9N80FI , IRF830 , STHV102 , STHV102FI , STHV82 , STHV82FI , STK12N05L , STK12N06L , STK14N05 , STK14N06 .

 

 
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