KNP9120A MOSFET. Datasheet pdf. Equivalent
Type Designator: KNP9120A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 40 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 97 nC
trⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 305 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
Package: TO220
KNP9120A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
KNP9120A Datasheet (PDF)
knp9120a.pdf
40A200VN-CHANNELMOSFET9120AKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1. Features Proprietary NewPlanar Technology RDS(ON)=50m (typ.)@VGS=10V LowGate Charge Minimize Switching Loss Fast Recovery Body Diode2. Application DC-DCConverters DC-ACInverters for UPS SMPSand Motor controls3. PinconfigurationPin Function1 Gate2 Drain3 Source4 Drain
knp9120a knh9120a.pdf
40A200VN-CHANNELMOSFETKNX9120AKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1. Features Proprietary NewPlanar Technology RDS(ON)=50m (typ.)@VGS=10V LowGate Charge Minimize Switching Loss Fast Recovery Body Diode2. Application DC-DCConverters DC-ACInverters for UPS SMPSand Motor controls3. PinconfigurationPin Function1 Gate2 Drain3 Source4 Dra
knp9130a knh9130a.pdf
40A300VKNX9130AN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.General Features Proprietary NewPlanar Technology R =100m@V =10VDS(ON),typ. GS LowGate Charge Minimize Switching Loss Fast Recovery Body Diode2.Applications DC-DCConverters DC-ACInverters for UPS SMPSand Motor controls3. PinconfigurationPin Function1 Gate2 Drain3
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
