KNU8606A Datasheet. Specs and Replacement

Type Designator: KNU8606A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 45 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 35 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 145 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm

Package: TO251

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KNU8606A datasheet

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KNU8606A

35A 60V N-CHANNELMOSFET KNX8606A KIA KIA KIA SEMICONDUCTORS SEMICONDUCTORS SEMICONDUCTORS 1. Description The KNX8606Ais the high cell density trenched N-ch MOSFETSwith provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The KIA8606 meet the RoHS and green product requirement, 100%EASguaranteed with full functionreliability approved. 2. F... See More ⇒

Detailed specifications: KNP6650A, KNP7150A, KNP9120A, KNP9130A, KNU4360A, KNU4820B, KNU6610A, KNU8103A, MMIS60R580P, KNY2803A, KNY3204A, KNY3303A, KNY3403A, KNY3404C, KNY3406C, KNY3703A, KPE4403A2

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs