KNY2803A MOSFET. Datasheet pdf. Equivalent
Type Designator: KNY2803A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
|Id|ⓘ - Maximum Drain Current: 150 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 110 nC
trⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 715 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm
Package: DFN5X6
KNY2803A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
KNY2803A Datasheet (PDF)
kny2803a.pdf
150A30VKNX2803AN-CHANNEL MOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1. Features R =2.2mtyp.@ V =10VDS(on) GS Low On-Resistance Fast Switching 100% Avalanche Tested Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant2. FeaturesKNX2803A designed by the trench processing techniques to achieve extremely l
knp2803a knb2803a knd2803a kny2803a.pdf
150A30VKNX2803AN-CHANNEL MOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1. Features R =2.2mtyp.@ V =10VDS(on) GS Low On-Resistance Fast Switching 100% Avalanche Tested Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant2. FeaturesKNX2803A designed by the trench processing techniques to achieve extremely l
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MOSFET: SUN830I | SUN830F | SUN830DN | SUN830D | SUN82A20CI | SUN50A20CI | SUN09A40D | SUN05A50ZF | SUN05A50ZD | SUN05A25F | SRN1865FD | SRN1860FD | SRN1860F | SRN1665FD | SRN1660FD | SRN1660F