L2N7002KDW1T1G Specs and Replacement
Type Designator: L2N7002KDW1T1G
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.32 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 3.4 nS
Cossⓘ - Output Capacitance: 3 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.3 Ohm
Package: SOT363
L2N7002KDW1T1G substitution
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L2N7002KDW1T1G datasheet
l2n7002kdw1t1g l2n7002kdw1t3g.pdf
L2N7002KDW1T1G S-L2N7002KDW1T1G Small Signal MOSFET 380 mAmps, 60 Volts N Channel SC-88 1. FEATURES We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SC88(SOT-363) qualified and PPAP capable. ESD Protected 2. D... See More ⇒
l2n7002klt1g.pdf
LESHAN RADIO COMPANY, LTD. Small Signal MOSFET L2N7002KLT1G 380 mAmps, 60 Volts N Channel SOT 23 S-L2N7002KLT1G FEATURES 3 1)ESD Protected 2)Low RDS(on) 1 3)Surface Mount Package 2 4)This is a Pb-Free Device 5)We declare that the material of product compliant with SOT 23 RoHS requirements and Halogen Free. 6) S- Prefix for Automotive and Other Applications Requiring Un... See More ⇒
jmtl2n7002ks.pdf
JMTL2N7002KS Description JMT N-channel MOSFET Features Application V =60V, I =0.3A Battery Operated Systems DS D R ... See More ⇒
Detailed specifications: KNY3403A, KNY3404C, KNY3406C, KNY3703A, KPE4403A2, KPE4703A, S-L2N7002DW1T1G, L2N7002FLT1G, IRF540N, L2N7002KDW1T3G, L2N7002KLT1G, L2N7002KN3T5G, S-L2N7002LT1G, L2N7002M3T5G, S-L2N7002M3T5G, L2N7002SDW1T1G, L2N7002SDW1T3G
Keywords - L2N7002KDW1T1G MOSFET specs
L2N7002KDW1T1G cross reference
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L2N7002KDW1T1G substitution
L2N7002KDW1T1G replacement
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History: AOB11S65 | RSR025P03 | STD17NF03L-1 | 2SK4204LS | VS3540AC | BRCS2302MA
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