STHV82FI Specs and Replacement
Type Designator: STHV82FI
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 85 nS
Cossⓘ - Output Capacitance: 165 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
Package: ISOWATT218
STHV82FI substitution
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STHV82FI datasheet
Detailed specifications: STH8NA60 , STH8NA60FI , STH9N80 , STH9N80FI , STH9NA60 , STHV102 , STHV102FI , STHV82 , IRF740 , STK12N05L , STK12N06L , STK14N05 , STK14N06 , STK14N10 , STK16N10L , STK17N10 , STK18N05 .
Keywords - STHV82FI MOSFET specs
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