LBSS123LT1G MOSFET. Datasheet pdf. Equivalent
Type Designator: LBSS123LT1G
Marking Code: SA
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.225 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
|Id|ⓘ - Maximum Drain Current: 0.17 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 9 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 6 Ohm
Package: SOT23
LBSS123LT1G Transistor Equivalent Substitute - MOSFET Cross-Reference Search
LBSS123LT1G Datasheet (PDF)
lbss123lt1g s-lbss123lt1g.pdf
LESHAN RADIO COMPANY, LTD.N-CHANNEL POWER MOSFETLBSS123LT1GLBSS123LT1GS-LBSS123LT1GFEATURE3 Pb-Free Package is available. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.1DEVICE MARKING AND ORDERING INFORMATION2SOT-23Device Marking Shipping LBSS123LT1G3000/Tape&ReelSA
lbss139lt1g lbss139lt3g.pdf
LBSS139LT1GS-LBSS139LT1GPower MOSFET200 mAmps, 50 Volts NChannel SOT-231. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SOT23(TO-236) qualified and PPAP capable.Low threshold voltage (VGS(th):
lbss138wt1g s-lbss138wt1g.pdf
LBSS138WT1GS-LBSS138WT1GPower MOSFET200 mAmps, 50 Volts NChannel SC-701. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SC70(SOT-323) qualified and PPAP capable.Low threshold voltage (VGS(th):
lbss139dw1t1g lbss139dw1t3g.pdf
LBSS139DW1T1GS-LBSS139DW1T1GPower MOSFET200 mAmps, 50 Volts NChannel SC-881. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SC88(SOT-363) qualified and PPAP capable.Low threshold voltage (VGS(t
lbss138lt1g s-lbss138lt1g.pdf
LESHAN RADIO COMPANY, LTD.Power MOSFETLBSS138LT1G200 mAmps, 50 Volts S-LBSS138LT1GNChannel SOT233Typical applications are dcdc converters, power management inportable and batterypowered products such as computers, printers,1PCMCIA cards, cellular and cordless telephones.2 Low Threshold Voltage (VGS(th): 0.5V...1.5V) makes it ideal for lowvoltage applicat
lbss139lt1g.pdf
LBSS139LT1Gwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (mA)Definition2.8 at VGS = 10 V60 250 Low Threshold: 2 V (typ.) Low Input Capacitance: 25 pF Fast Switching Speed: 25 ns Low Input and Output LeakageSOT-23 TrenchFET Power MOSFET 1200V ESD ProtectionG
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
