LBSS139DW1T1G Specs and Replacement
Type Designator: LBSS139DW1T1G
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.38 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Cossⓘ - Output Capacitance: 3.5 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 3.5 Ohm
Package: SOT363
LBSS139DW1T1G substitution
- MOSFET ⓘ Cross-Reference Search
LBSS139DW1T1G datasheet
lbss139dw1t1g lbss139dw1t3g.pdf
LBSS139DW1T1G S-LBSS139DW1T1G Power MOSFET 200 mAmps, 50 Volts N Channel SC-88 1. FEATURES We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SC88(SOT-363) qualified and PPAP capable. Low threshold voltage (VGS(t... See More ⇒
lbss139lt1g lbss139lt3g.pdf
LBSS139LT1G S-LBSS139LT1G Power MOSFET 200 mAmps, 50 Volts N Channel SOT-23 1. FEATURES We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SOT23(TO-236) qualified and PPAP capable. Low threshold voltage (VGS(th) ... See More ⇒
lbss139lt1g.pdf
LBSS139LT1G www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (mA) Definition 2.8 at VGS = 10 V 60 250 Low Threshold 2 V (typ.) Low Input Capacitance 25 pF Fast Switching Speed 25 ns Low Input and Output Leakage SOT-23 TrenchFET Power MOSFET 1200V ESD Protection G... See More ⇒
lbss138wt1g s-lbss138wt1g.pdf
LBSS138WT1G S-LBSS138WT1G Power MOSFET 200 mAmps, 50 Volts N Channel SC-70 1. FEATURES We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SC70(SOT-323) qualified and PPAP capable. Low threshold voltage (VGS(th) ... See More ⇒
Detailed specifications: S-L2SK3018WT1G, L2SK801LT1G, LBSS123LT1G, S-LBSS123LT1G, LBSS138LT1G, S-LBSS138LT1G, LBSS138WT1G, S-LBSS138WT1G, IRFP250N, LBSS139DW1T3G, LBSS139LT1G, LBSS139LT3G, LBSS260DW1T1G, S-LBSS260DW1T1G, LBSS8402DW1T1G, S-LBSS8402DW1T1G, LBSS84DW1T1G
Keywords - LBSS139DW1T1G MOSFET specs
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History: IRF9389TR | SM1A54NHU
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