All MOSFET. LBSS139DW1T1G Datasheet

 

LBSS139DW1T1G MOSFET. Datasheet pdf. Equivalent


   Type Designator: LBSS139DW1T1G
   Marking Code: J2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.38 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
   |Id|ⓘ - Maximum Drain Current: 0.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 3.5 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 3.5 Ohm
   Package: SOT363

 LBSS139DW1T1G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

LBSS139DW1T1G Datasheet (PDF)

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 lbss139dw1t1g lbss139dw1t3g.pdf

LBSS139DW1T1G LBSS139DW1T1G

LBSS139DW1T1GS-LBSS139DW1T1GPower MOSFET200 mAmps, 50 Volts NChannel SC-881. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SC88(SOT-363) qualified and PPAP capable.Low threshold voltage (VGS(t

 7.1. Size:1088K  lrc
 lbss139lt1g lbss139lt3g.pdf

LBSS139DW1T1G LBSS139DW1T1G

LBSS139LT1GS-LBSS139LT1GPower MOSFET200 mAmps, 50 Volts NChannel SOT-231. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SOT23(TO-236) qualified and PPAP capable.Low threshold voltage (VGS(th):

 7.2. Size:1581K  cn vbsemi
 lbss139lt1g.pdf

LBSS139DW1T1G LBSS139DW1T1G

LBSS139LT1Gwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (mA)Definition2.8 at VGS = 10 V60 250 Low Threshold: 2 V (typ.) Low Input Capacitance: 25 pF Fast Switching Speed: 25 ns Low Input and Output LeakageSOT-23 TrenchFET Power MOSFET 1200V ESD ProtectionG

 8.1. Size:560K  lrc
 lbss138wt1g s-lbss138wt1g.pdf

LBSS139DW1T1G LBSS139DW1T1G

LBSS138WT1GS-LBSS138WT1GPower MOSFET200 mAmps, 50 Volts NChannel SC-701. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SC70(SOT-323) qualified and PPAP capable.Low threshold voltage (VGS(th):

 8.2. Size:540K  lrc
 lbss138lt1g s-lbss138lt1g.pdf

LBSS139DW1T1G LBSS139DW1T1G

LESHAN RADIO COMPANY, LTD.Power MOSFETLBSS138LT1G200 mAmps, 50 Volts S-LBSS138LT1GNChannel SOT233Typical applications are dcdc converters, power management inportable and batterypowered products such as computers, printers,1PCMCIA cards, cellular and cordless telephones.2 Low Threshold Voltage (VGS(th): 0.5V...1.5V) makes it ideal for lowvoltage applicat

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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