LBSS8402DW1T1G MOSFET. Datasheet pdf. Equivalent
Type Designator: LBSS8402DW1T1G
Marking Code: 402
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pdⓘ - Maximum Power Dissipation: 0.38 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
|Id|ⓘ - Maximum Drain Current: 0.13 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 15 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 3.5 Ohm
Package: SOT363
LBSS8402DW1T1G Transistor Equivalent Substitute - MOSFET Cross-Reference Search
LBSS8402DW1T1G Datasheet (PDF)
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