All MOSFET. S-LBSS84ELT1G Datasheet

 

S-LBSS84ELT1G MOSFET. Datasheet pdf. Equivalent


   Type Designator: S-LBSS84ELT1G
   Marking Code: PE
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.225 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 0.13 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 1.1 nC
   trⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 4 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
   Package: SOT23

 S-LBSS84ELT1G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

S-LBSS84ELT1G Datasheet (PDF)

 ..1. Size:553K  lrc
lbss84elt1g s-lbss84elt1g.pdf

S-LBSS84ELT1G
S-LBSS84ELT1G

LBSS84ELT1GS-LBSS84ELT1GPower MOSFET 60V PChannel1. FEATURESAdvanced trench cell design.High speed switch.G-S ESD Protected: 1000VPb-Free Package is available.We declare that the material of product compliance withRoHS requirements and Halogen Free.S- prefix for automotive and other applications requiring unique site and control change re

 6.1. Size:611K  lrc
lbss84wt1g s-lbss84wt1g.pdf

S-LBSS84ELT1G
S-LBSS84ELT1G

LBSS84WT1GS-LBSS84WT1GPower MOSFET130 mA, 50V PChannel SC-701. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SC70(SOT-323) qualified and PPAP capable.Energy efficient2. DEVICE MARKING AND OR

 6.2. Size:477K  lrc
lbss84lt1g s-lbss84lt1g.pdf

S-LBSS84ELT1G
S-LBSS84ELT1G

LBSS84LT1GS-LBSS84LT1GPower MOSFET130 mA, 50V PChannel SOT-231. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SOT23(TO-236) qualified and PPAP capable.Energy efficient2. DEVICE MARKING AND O

 6.3. Size:500K  lrc
lbss84dw1t1g s-lbss84dw1t1g.pdf

S-LBSS84ELT1G
S-LBSS84ELT1G

LESHAN RADIO COMPANY, LTD.Power MOSFET mAmps, 50 Vots130PChannel SC88LBSS84DW1T1GS-LBSS84DW1T1GThese miniature surface mount MOSFETs reduce power lossconserve energy, making this device ideal for use in small powermanagement circuitry. Typical applications are dcdc converters, loadswitching, power management in portable and batterypoweredproducts such as compute

 6.4. Size:635K  lrc
lbss8402dw1t1g s-lbss8402dw1t1g.pdf

S-LBSS84ELT1G

Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , 60N06 , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

History: IXCY01N90E | HU60N03 | SPN4412WS8RG

 

 
Back to Top