SLD5N65S Datasheet. Specs and Replacement

Type Designator: SLD5N65S  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 58 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 33 nS

Cossⓘ - Output Capacitance: 48 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm

Package: TO252

SLD5N65S substitution

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SLD5N65S datasheet

 ..1. Size:463K  maple semi
sld5n65s slu5n65s.pdf pdf_icon

SLD5N65S

SLD5N65S / SLU5N65S SLD5N65S / SLU5N65S 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 4.5A, 650V, RDS(on) = 2.5 @VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge ( typical 13.3nC) This advanced technology has been especially tailored - High ruggedness to minimize on-state resistance, provide superior switching... See More ⇒

 9.1. Size:319K  maple semi
sld5n50s2 slu5n50s2.pdf pdf_icon

SLD5N65S

LEAD FREE Pb RoHS SLD5N50S2 / SLU5N50S2 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 5A, 500V, RDS(on) typ. = 1.35 @VGS = 10 V ( ) yp advanced planar stripe DMOS technology. - Low gate charge ( typical 10 nC) This advanced technology has been especially tailored to - High ruggedness minimize on-state resistance, provide super... See More ⇒

Detailed specifications: S-LBSS84DW1T1G, LBSS84ELT1G, S-LBSS84ELT1G, SLD2N65UZ, SLU2N65UZ, SLD3101, SLD5N50S2, SLU5N50S2, 13N50, SLU5N65S, SLD60R380S2, SLU60R380S2, SLD60R650S2, SLU60R650S2, SLD65R420S2, SLU65R420S2, SLD65R700S2

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