All MOSFET. SLD60R650S2 Datasheet

 

SLD60R650S2 Datasheet and Replacement


   Type Designator: SLD60R650S2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 29 nS
   Cossⓘ - Output Capacitance: 26 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm
   Package: TO252
 

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SLD60R650S2 Datasheet (PDF)

 ..1. Size:1010K  maple semi
 sld60r650s2 slu60r650s2.pdf pdf_icon

SLD60R650S2

SLD60R650S2/SLU60R650S2600V N-channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis- 7A, 600V, RDS(on)typ= 0.48@VGS = 10 VAdvanced Super-Junction technology.- Low gate charge ( typical 16nC)This advanced technology has been especially tailored to- High ruggednessminimize conduction loss, provide superior switching- Fast switchingper

 8.1. Size:1022K  maple semi
 sld60r380s2 slu60r380s2.pdf pdf_icon

SLD60R650S2

SLD60R380S2/SLU60R380S2600V N-channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis- 11A, 600V, RDS(on)typ= 0.3@VGS = 10 VAdvanced Super-Junction technology.- Low gate charge ( typical 22nC)This advanced technology has been especially tailored to- High ruggednessminimize conduction loss, provide superior switching- Fast switchingper

Datasheet: SLU2N65UZ , SLD3101 , SLD5N50S2 , SLU5N50S2 , SLD5N65S , SLU5N65S , SLD60R380S2 , SLU60R380S2 , IRF530 , SLU60R650S2 , SLD65R420S2 , SLU65R420S2 , SLD65R700S2 , SLU65R700S2 , SLD65R950S2 , SLD70R420S2 , SLU70R420S2 .

History: OSG70R1K4FF | SLD60R380S2 | IXTA4N150HV | PMZ320UPE

Keywords - SLD60R650S2 MOSFET datasheet

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