SLB80R380SJ Datasheet. Specs and Replacement

Type Designator: SLB80R380SJ  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 104 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 15 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 340 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm

Package: TO263

SLB80R380SJ substitution

- MOSFET ⓘ Cross-Reference Search

 

SLB80R380SJ datasheet

 ..1. Size:1048K  maple semi
 sld80r380sj slu80r380sj slp80r380sj slf80r380sj slb80r380sj sli80r380sj.pdf pdf_icon

SLB80R380SJ

SLD80R380SJ,SLU80R380SJ,SLP80R380SJ SLF80R380SJ, SLB80R380SJ, SLI80R380SJ 800V N-Channel MOSFET Features General Description Features -15A, 800V, RDS(on) typ.= 0.34 @VGS = 10 V This Power MOSFET is produced using Maple semi s Advanced Super-Junction technology. - Low gate charge ( typical 43nC) - 7.6A, 500V, RDS(on) typ. = 0.5 @VGS = 10 V This advanced technology has been ... See More ⇒

 8.1. Size:614K  maple semi
 sld80r850sj slu80r850sj slp80r850sj slf80r850sj slb80r850sj sli80r850sj.pdf pdf_icon

SLB80R380SJ

SLD80R850SJ,SLU80R850SJ,SLP80R850SJ SLF80R850SJ, SLB80R850SJ, SLI80R850SJ 800V N-Channel MOSFET Features General Description Features -7A, 800V, RDS(on) typ.= 0.8 @VGS = 10 V This Power MOSFET is produced using Maple semi s Advanced Super-Junction technology. - Low gate charge ( typical 25nC) - 7.6A, 500V, RDS(on) typ. = 0.5 @VGS = 10 V This advanced technology has been es... See More ⇒

 8.2. Size:626K  maple semi
 sld80r500sj slu80r500sj slp80r500sj slf80r500sj slb80r500sj sli80r500sj.pdf pdf_icon

SLB80R380SJ

SLD80R500SJ,SLU80R500SJ,SLP80R500SJ SLF80R500SJ, SLB80R500SJ, SLI80R500SJ 800V N-Channel MOSFET Features General Description Features -11A, 800V, RDS(on) typ.= 0.46 @VGS = 10 V This Power MOSFET is produced using Maple semi s Advanced Super-Junction technology. - Low gate charge ( typical 38nC) - 7.6A, 500V, RDS(on) typ. = 0.5 @VGS = 10 V This advanced technology has been ... See More ⇒

 8.3. Size:634K  maple semi
 slp80r240sj slf80r240sj slb80r240sj.pdf pdf_icon

SLB80R380SJ

SLB/F/P80R240SJ 800V N-Channel MOSFET Features General Description Features - 20A, 800V, RDS(on) typ.= 0.22 @VGS = 10 V This Power MOSFET is produced using Maple semi s Advanced Super-Junction technology. - Low gate charge ( typical 70nC) - 7.6A, 500V, RDS(on) typ. = 0.5 @VGS = 10 V This advanced technology has been especially tailored - High ruggedness - Low gate charge ( ty... See More ⇒

SHOW MORE

Detailed specifications: SLU70R600S2, SLD70R900S2, SLF70R900S2, SLD740UZ, SLD80R380SJ, SLU80R380SJ, SLP80R380SJ, SLF80R380SJ, RFP50N06, SLI80R380SJ, SLD80R500SJ, SLU80R500SJ, SLP80R500SJ, SLF80R500SJ, SLB80R500SJ, SLI80R500SJ, SLD80R850SJ

Keywords - SLB80R380SJ MOSFET specs

 SLB80R380SJ cross reference

 SLB80R380SJ equivalent finder

 SLB80R380SJ pdf lookup

 SLB80R380SJ substitution

 SLB80R380SJ replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs