All MOSFET. SLF80R500SJ Datasheet

 

SLF80R500SJ Datasheet and Replacement


   Type Designator: SLF80R500SJ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 31 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 11 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 140 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
   Package: TO220F
 

 SLF80R500SJ substitution

   - MOSFET ⓘ Cross-Reference Search

 

SLF80R500SJ Datasheet (PDF)

 ..1. Size:626K  maple semi
 sld80r500sj slu80r500sj slp80r500sj slf80r500sj slb80r500sj sli80r500sj.pdf pdf_icon

SLF80R500SJ

SLD80R500SJ,SLU80R500SJ,SLP80R500SJ SLF80R500SJ, SLB80R500SJ, SLI80R500SJ 800V N-Channel MOSFET FeaturesGeneral Description Features -11A, 800V, RDS(on) typ.= 0.46@VGS = 10 V This Power MOSFET is produced using Maple semis Advanced Super-Junction technology. - Low gate charge ( typical 38nC) - 7.6A, 500V, RDS(on) typ. = 0.5@VGS = 10 VThis advanced technology has been

 8.1. Size:2464K  maple semi
 slf80r830gt.pdf pdf_icon

SLF80R500SJ

SLF80R830GT800V N-Channel Multi-EPI Super-junction MOSFETGeneral Description FeaturesThis power MOSFET is produced by using Msemiteks ad- 7A*, 800V, RDS(on),Typ = 700mvanced Super-junction MOSFET technology. This advanced Low gate charge (Qg,typ = 16nC)technology has been especially tailored to minimize on-state High ruggednessresistance, provide superior switchin

 8.2. Size:614K  maple semi
 sld80r850sj slu80r850sj slp80r850sj slf80r850sj slb80r850sj sli80r850sj.pdf pdf_icon

SLF80R500SJ

SLD80R850SJ,SLU80R850SJ,SLP80R850SJ SLF80R850SJ, SLB80R850SJ, SLI80R850SJ 800V N-Channel MOSFET FeaturesGeneral Description Features -7A, 800V, RDS(on) typ.= 0.8@VGS = 10 V This Power MOSFET is produced using Maple semis Advanced Super-Junction technology. - Low gate charge ( typical 25nC) - 7.6A, 500V, RDS(on) typ. = 0.5@VGS = 10 VThis advanced technology has been es

 8.3. Size:634K  maple semi
 slp80r240sj slf80r240sj slb80r240sj.pdf pdf_icon

SLF80R500SJ

SLB/F/P80R240SJ800V N-Channel MOSFETFeaturesGeneral DescriptionFeatures - 20A, 800V, RDS(on) typ.= 0.22@VGS = 10 VThis Power MOSFET is produced using Maple semisAdvanced Super-Junction technology. - Low gate charge ( typical 70nC) - 7.6A, 500V, RDS(on) typ. = 0.5@VGS = 10 VThis advanced technology has been especially tailored - High ruggedness - Low gate charge ( ty

SHOW MORE

Datasheet: SLU80R380SJ , SLP80R380SJ , SLF80R380SJ , SLB80R380SJ , SLI80R380SJ , SLD80R500SJ , SLU80R500SJ , SLP80R500SJ , STF13NM60N , SLB80R500SJ , SLI80R500SJ , SLD80R850SJ , SLU80R850SJ , SLP80R850SJ , SLF80R850SJ , SLB80R850SJ , SLI80R850SJ .

History: SPB80N03S2-03 | MMP2301

Keywords - SLF80R500SJ MOSFET datasheet

 SLF80R500SJ cross reference
 SLF80R500SJ equivalent finder
 SLF80R500SJ lookup
 SLF80R500SJ substitution
 SLF80R500SJ replacement

 

 
Back to Top

 


 
.