SLD80R850SJ Datasheet. Specs and Replacement

Type Designator: SLD80R850SJ  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 63 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 110 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm

Package: TO252

SLD80R850SJ substitution

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SLD80R850SJ datasheet

 ..1. Size:614K  maple semi
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SLD80R850SJ

SLD80R850SJ,SLU80R850SJ,SLP80R850SJ SLF80R850SJ, SLB80R850SJ, SLI80R850SJ 800V N-Channel MOSFET Features General Description Features -7A, 800V, RDS(on) typ.= 0.8 @VGS = 10 V This Power MOSFET is produced using Maple semi s Advanced Super-Junction technology. - Low gate charge ( typical 25nC) - 7.6A, 500V, RDS(on) typ. = 0.5 @VGS = 10 V This advanced technology has been es... See More ⇒

 8.1. Size:626K  maple semi
 sld80r500sj slu80r500sj slp80r500sj slf80r500sj slb80r500sj sli80r500sj.pdf pdf_icon

SLD80R850SJ

SLD80R500SJ,SLU80R500SJ,SLP80R500SJ SLF80R500SJ, SLB80R500SJ, SLI80R500SJ 800V N-Channel MOSFET Features General Description Features -11A, 800V, RDS(on) typ.= 0.46 @VGS = 10 V This Power MOSFET is produced using Maple semi s Advanced Super-Junction technology. - Low gate charge ( typical 38nC) - 7.6A, 500V, RDS(on) typ. = 0.5 @VGS = 10 V This advanced technology has been ... See More ⇒

 8.2. Size:1048K  maple semi
 sld80r380sj slu80r380sj slp80r380sj slf80r380sj slb80r380sj sli80r380sj.pdf pdf_icon

SLD80R850SJ

SLD80R380SJ,SLU80R380SJ,SLP80R380SJ SLF80R380SJ, SLB80R380SJ, SLI80R380SJ 800V N-Channel MOSFET Features General Description Features -15A, 800V, RDS(on) typ.= 0.34 @VGS = 10 V This Power MOSFET is produced using Maple semi s Advanced Super-Junction technology. - Low gate charge ( typical 43nC) - 7.6A, 500V, RDS(on) typ. = 0.5 @VGS = 10 V This advanced technology has been ... See More ⇒

 9.1. Size:4793K  maple semi
 sld80n02tb.pdf pdf_icon

SLD80R850SJ

SLD80N02TB 20V N-Channel MOSFET General Description Features This Power MOSFET is produced using Msemitek s advanced 71A, 20V, RDS(on),Typ = 3.6m TRENCH technology. This advanced technology has been es- Low gate charge (Qg,typ = 30nC) pecially tailored to minimize conduction loss, provide superior Fast switching switching performance, and withstand high energy pulse in t... See More ⇒

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Detailed specifications: SLB80R380SJ, SLI80R380SJ, SLD80R500SJ, SLU80R500SJ, SLP80R500SJ, SLF80R500SJ, SLB80R500SJ, SLI80R500SJ, IRFZ24N, SLU80R850SJ, SLP80R850SJ, SLF80R850SJ, SLB80R850SJ, SLI80R850SJ, SLF3101, SLP3101, SLF50R140SJ

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