SLF80R850SJ Datasheet. Specs and Replacement
Type Designator: SLF80R850SJ 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 110 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
Package: TO220F
SLF80R850SJ substitution
- MOSFET ⓘ Cross-Reference Search
SLF80R850SJ datasheet
sld80r850sj slu80r850sj slp80r850sj slf80r850sj slb80r850sj sli80r850sj.pdf
SLD80R850SJ,SLU80R850SJ,SLP80R850SJ SLF80R850SJ, SLB80R850SJ, SLI80R850SJ 800V N-Channel MOSFET Features General Description Features -7A, 800V, RDS(on) typ.= 0.8 @VGS = 10 V This Power MOSFET is produced using Maple semi s Advanced Super-Junction technology. - Low gate charge ( typical 25nC) - 7.6A, 500V, RDS(on) typ. = 0.5 @VGS = 10 V This advanced technology has been es... See More ⇒
slf80r830gt.pdf
SLF80R830GT 800V N-Channel Multi-EPI Super-junction MOSFET General Description Features This power MOSFET is produced by using Msemitek s ad- 7A*, 800V, RDS(on),Typ = 700m vanced Super-junction MOSFET technology. This advanced Low gate charge (Qg,typ = 16nC) technology has been especially tailored to minimize on-state High ruggedness resistance, provide superior switchin... See More ⇒
sld80r500sj slu80r500sj slp80r500sj slf80r500sj slb80r500sj sli80r500sj.pdf
SLD80R500SJ,SLU80R500SJ,SLP80R500SJ SLF80R500SJ, SLB80R500SJ, SLI80R500SJ 800V N-Channel MOSFET Features General Description Features -11A, 800V, RDS(on) typ.= 0.46 @VGS = 10 V This Power MOSFET is produced using Maple semi s Advanced Super-Junction technology. - Low gate charge ( typical 38nC) - 7.6A, 500V, RDS(on) typ. = 0.5 @VGS = 10 V This advanced technology has been ... See More ⇒
slp80r240sj slf80r240sj slb80r240sj.pdf
SLB/F/P80R240SJ 800V N-Channel MOSFET Features General Description Features - 20A, 800V, RDS(on) typ.= 0.22 @VGS = 10 V This Power MOSFET is produced using Maple semi s Advanced Super-Junction technology. - Low gate charge ( typical 70nC) - 7.6A, 500V, RDS(on) typ. = 0.5 @VGS = 10 V This advanced technology has been especially tailored - High ruggedness - Low gate charge ( ty... See More ⇒
Detailed specifications: SLU80R500SJ, SLP80R500SJ, SLF80R500SJ, SLB80R500SJ, SLI80R500SJ, SLD80R850SJ, SLU80R850SJ, SLP80R850SJ, P60NF06, SLB80R850SJ, SLI80R850SJ, SLF3101, SLP3101, SLF50R140SJ, SLP50R140SJ, SLF60R080SS, SLF60R160S2
Keywords - SLF80R850SJ MOSFET specs
SLF80R850SJ cross reference
SLF80R850SJ equivalent finder
SLF80R850SJ pdf lookup
SLF80R850SJ substitution
SLF80R850SJ replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
