All MOSFET. SLF60R160S2 Datasheet

 

SLF60R160S2 Datasheet and Replacement


   Type Designator: SLF60R160S2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 47 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 24 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 74 nS
   Cossⓘ - Output Capacitance: 84 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm
   Package: TO220F
 

 SLF60R160S2 substitution

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SLF60R160S2 Datasheet (PDF)

 ..1. Size:461K  maple semi
 slf60r160s2.pdf pdf_icon

SLF60R160S2

SLF60R160S2600V N-channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis- 24A, 600V, RDS(on)typ= 0.14@VGS = 10 VAdvanced Super-Junction technology.- Low gate charge ( typical 49nC)This advanced technology has been especially tailored to- High ruggednessminimize conduction loss, provide superior switching- Fast switchingperformance, a

 7.1. Size:960K  maple semi
 slp60r190s2 slf60r190s2.pdf pdf_icon

SLF60R160S2

SLP60R190S2/SLF60R190S2600V N-channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis- 20A, 600V, RDS(on)typ= 0.16@VGS = 10 VAdvanced Super-Junction technology.- Low gate charge ( typical 39nC)This advanced technology has been especially tailored to- High ruggednessminimize conduction loss, provide superior switching- Fast switchingpe

 8.1. Size:716K  maple semi
 slp60r850s2 slf60r850s2.pdf pdf_icon

SLF60R160S2

SLP60R850S2/SLF60R850S2600V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 5A, 600V, RDS(on) = 850m@VGS = 10 Vadvanced Super-Junction MOSFET technology. - Low gate charge This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching - Fast switchingperformance,

 8.2. Size:1025K  maple semi
 slf60r650s2.pdf pdf_icon

SLF60R160S2

SLF60R650S2600V N-channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis- 7A, 600V, RDS(on)typ= 0.48@VGS = 10 VAdvanced Super-Junction technology.- Low gate charge ( typical 16nC)This advanced technology has been especially tailored to- High ruggednessminimize conduction loss, provide superior switching- Fast switchingperformance, an

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Datasheet: SLF80R850SJ , SLB80R850SJ , SLI80R850SJ , SLF3101 , SLP3101 , SLF50R140SJ , SLP50R140SJ , SLF60R080SS , STP65NF06 , SLF60R650S2 , SLF65R300S2 , SLF65R700S2 , SLF65R950S2 , SLH60R080SS , SLP10N60C , SLF10N60C , SLP10N65A .

History: RU206G | IXFT30N40Q | SWK083R06VSM | PHD18NQ10T | SM6011NSF | H02N60SI | LBSS139DW1T3G

Keywords - SLF60R160S2 MOSFET datasheet

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