SLF65R950S2 Datasheet. Specs and Replacement
Type Designator: SLF65R950S2 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 27 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 4 V
Qg ⓘ - Total Gate Charge: 17.18 nC
tr ⓘ - Rise Time: 32 nS
Cossⓘ - Output Capacitance: 16 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.95 Ohm
Package: TO220F
SLF65R950S2 substitution
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SLF65R950S2 datasheet
slf65r950s2.pdf
SLF65R950S2 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 5A, 650V, RDS(on) = 950m @VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge This advanced technology has been especially tailored - High ruggedness to minimize on-state resistance, provide superior switching - Fast switching performance, and withstand h... See More ⇒
slf65r1k2e7.pdf
SLF65R1K2E7 650V N-Channel Multi-EPI Super-junction MOSFET General Description Features This power MOSFET is produced by using Msemitek s ad- 4.9A*, 650V, RDS(on),Typ = 1.0 vanced Super-junction MOSFET technology. This advanced Low gate charge (Qg,typ = 8nC) technology has been especially tailored to minimize on-state High ruggedness resistance, provide superior switchin... See More ⇒
slf65r380e7c.pdf
SLF65R380E7C 650V N-Channel Multi-EPI Super-junction MOSFET General Description Features This power MOSFET is produced by using Msemitek s ad- 11A*, 650V, RDS(on),Typ = 320m vanced Super-junction MOSFET technology. This advanced Low gate charge (Qg,typ = 22nC) technology has been especially tailored to minimize on-state High ruggedness resistance, provide superior switch... See More ⇒
slf65r180e7c.pdf
SLF65R180E7C 650V N-Channel Multi-EPI Super-junction MOSFET General Description Features This power MOSFET is produced by using Msemitek s ad- 22A*, 650V, RDS(on),Typ = 150m vanced Super-junction MOSFET technology. This advanced Low gate charge (Qg,typ = 34nC) technology has been especially tailored to minimize on-state High ruggedness resistance, provide superior switch... See More ⇒
Detailed specifications: SLP3101, SLF50R140SJ, SLP50R140SJ, SLF60R080SS, SLF60R160S2, SLF60R650S2, SLF65R300S2, SLF65R700S2, IRFB7545, SLH60R080SS, SLP10N60C, SLF10N60C, SLP10N65A, SLF10N65A, SLP10N65C, SLF10N65C, SLP10N65S
Keywords - SLF65R950S2 MOSFET specs
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