All MOSFET. SLF10N60C Datasheet

 

SLF10N60C Datasheet and Replacement


   Type Designator: SLF10N60C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 39 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 24.5 nS
   Cossⓘ - Output Capacitance: 119 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.745 Ohm
   Package: TO220F
 

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SLF10N60C Datasheet (PDF)

 ..1. Size:1218K  maple semi
 slp10n60c slf10n60c.pdf pdf_icon

SLF10N60C

SLP10N60C / SLF10N60C600V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 10A, 600V, RDS(on)typ. = 0.62@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 36.5nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching - Fast switchi

 7.1. Size:1189K  maple semi
 slp10n65c slf10n65c.pdf pdf_icon

SLF10N60C

SLP10N65C / SLF10N65C650V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 10A, 650V, RDS(on) typ. = 0.678@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 38nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching - Fast switchi

 7.2. Size:666K  maple semi
 slp10n65s slf10n65s.pdf pdf_icon

SLF10N60C

LEAD FREEPbRoHSSLP10N65S/ SLF10N65S650V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 10A, 650V, RDS(on) typ=0.8@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 28.5nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switchi

 7.3. Size:2068K  maple semi
 slf10n65sv.pdf pdf_icon

SLF10N60C

SLF10N65SV650V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Msemiteks advanced 10A*, 650V, RDS(on),typ =0.81planar stripe DMOS technology. This advanced technology Low gate charge (Qg,typ = 27nC)has been especially tailored to minimize conduction loss, pro- Fast switchingvide superior switching performance, and withstand high en-

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Datasheet: SLF60R080SS , SLF60R160S2 , SLF60R650S2 , SLF65R300S2 , SLF65R700S2 , SLF65R950S2 , SLH60R080SS , SLP10N60C , AO3407 , SLP10N65A , SLF10N65A , SLP10N65C , SLF10N65C , SLP10N65S , SLF10N65S , SLP12N60C , SLF12N60C .

History: BLF7G22L-130 | 50N06L-TF3T-T | SIR864DP | RRR040P03 | NCEP40PT15D | 50N06G-TF3-T | UTD484

Keywords - SLF10N60C MOSFET datasheet

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