SLF10N60C MOSFET. Datasheet pdf. Equivalent
Type Designator: SLF10N60C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 39 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 10 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 36.5 nC
trⓘ - Rise Time: 24.5 nS
Cossⓘ - Output Capacitance: 119 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.745 Ohm
Package: TO220F
SLF10N60C Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SLF10N60C Datasheet (PDF)
slp10n60c slf10n60c.pdf
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SLP10N60C / SLF10N60C600V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 10A, 600V, RDS(on)typ. = 0.62@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 36.5nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching - Fast switchi
slp10n65c slf10n65c.pdf
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SLP10N65C / SLF10N65C650V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 10A, 650V, RDS(on) typ. = 0.678@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 38nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching - Fast switchi
slp10n65s slf10n65s.pdf
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LEAD FREEPbRoHSSLP10N65S/ SLF10N65S650V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 10A, 650V, RDS(on) typ=0.8@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 28.5nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switchi
slp10n65a slf10n65a.pdf
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LEAD FREEPbRoHSSLP10N65A/SLF10N65A650V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 10A, 650V, RDS(on)Typ = 0.745@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 19nC)This advanced technology has been especially tailored - Low Crss ( typical 5.3pF)to minimize on-state resistance, provide superi
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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