SLF13N50C Datasheet. Specs and Replacement
Type Designator: SLF13N50C 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 13 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 36.5 nS
Cossⓘ - Output Capacitance: 205 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.463 Ohm
Package: TO220F
SLF13N50C substitution
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SLF13N50C datasheet
slp13n50c slf13n50c.pdf
SLP13N50C / SLF13N50C 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 13A, 500V, RDS(on)typ. = 386m @VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge ( typical 44nC) This advanced technology has been especially tailored - High ruggedness to minimize on-state resistance, provide superior switching - Fast switching... See More ⇒
slp13n50a slf13n50a.pdf
LEAD FREE Pb RoHS SLP13N50A / SLF13N50A 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s advanced planar stripe DMOS technology. - 13A, 500V, RDS(on) = 0.483 @VGS = 10 V This advanced technology has been especially tailored - Low gate charge ( typical 19.1nC) to minimize on-state resistance, provide superior switching - Low Crss (... See More ⇒
Detailed specifications: SLF10N65S, SLP12N60C, SLF12N60C, SLP12N65C, SLF12N65C, SLP13N50A, SLF13N50A, SLP13N50C, IRF540N, SLP16N50C, SLF16N50C, SLP16N50S, SLF16N50S, SLP18N50C, SLF18N50C, SLP20N50C, SLF20N50C
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