All MOSFET. SLP16N50S Datasheet

 

SLP16N50S Datasheet and Replacement


   Type Designator: SLP16N50S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 29.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 16 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 45 nS
   Cossⓘ - Output Capacitance: 247 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: TO220
 

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SLP16N50S Datasheet (PDF)

 ..1. Size:938K  maple semi
 slp16n50s slf16n50s.pdf pdf_icon

SLP16N50S

SLP16N50S / SLF16N50S500V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 16A, 500V, RDS(on) = 280m@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 31nC)This advanced technology has been especially tailored - Low Crss ( typical 6.8pF)to minimize on-state resistance, provide superior switching - High rug

 6.1. Size:1321K  maple semi
 slp16n50c slf16n50c.pdf pdf_icon

SLP16N50S

SLP16N50C / SLF16N50C500V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 16A, 500V, RDS(on)typ. = 305m@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 52nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching - Fast switching

Datasheet: SLP12N65C , SLF12N65C , SLP13N50A , SLF13N50A , SLP13N50C , SLF13N50C , SLP16N50C , SLF16N50C , IRF640 , SLF16N50S , SLP18N50C , SLF18N50C , SLP20N50C , SLF20N50C , SLP2N65UZ , SLF2N65UZ , SLP32N20C .

History: SIHD4N80E | MMBFJ175 | IPC100N04S5L-2R6 | AO3456

Keywords - SLP16N50S MOSFET datasheet

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