All MOSFET. STK18N06L Datasheet

 

STK18N06L MOSFET. Datasheet pdf. Equivalent


   Type Designator: STK18N06L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 18 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 18 nC
   trⓘ - Rise Time: 360 nS
   Cossⓘ - Output Capacitance: 250 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.17 Ohm
   Package: SOT82

 STK18N06L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STK18N06L Datasheet (PDF)

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` STK1820FSemiconductor Semiconductor Advanced Power MOSFETDC-DC CONVERTER APPLICATION HIGH VOLTAGE SWITCHING APPLICATIONS Features High Voltage: BVDSS=200V(Min.) Low Crss : Crss=22pF(Typ.) Low gate charge : Qg=30nC(Typ.) Low RDS(on) :RDS(on)=0.17(Max.) Ordering Information Type NO. Marking Package Code STK1820F STK1820 TO-220F-3LOutline Dim

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