STK22N05 Datasheet and Replacement
Type Designator: STK22N05
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 65 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 22 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Qg ⓘ - Total Gate Charge: 26 nC
tr ⓘ - Rise Time: 90 nS
Cossⓘ - Output Capacitance: 320 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
Package: SOT82
STK22N05 substitution
STK22N05 Datasheet (PDF)
stk22n05.pdf

STK22N05N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTK22N05 50 V
stk22n06.pdf

STK22N06N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTK22N06 60 V
stk22n6f3.pdf

STK22N6F3N-channel 60 V, 0.0055 , 22 A, PolarPAKSTripFET Power MOSFETFeaturesType VDSS RDS(on) maxSTK22N6F3 60 V
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , SPP20N60C3 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
Keywords - STK22N05 MOSFET datasheet
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History: BSS84N3 | FX6KMJ-3



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