LNC10R180 Datasheet. Specs and Replacement
Type Designator: LNC10R180 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 147 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 56 nS
Cossⓘ - Output Capacitance: 215 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
Package: TO-220
LNC10R180 substitution
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LNC10R180 datasheet
lnc10r180 lnd10r180 lne10r180.pdf
LNC10R180 LND10R180/LNE10R180 Lonten N-channel 100V, 80A, 18m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 100V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 18m technology. This advanced technology has been ID 80A especially tailored to minimize on-state resistance, provide superior switching performance, and with ... See More ⇒
lnc10r040w3 lnd10r040w3 lne10r040w3 lnb10r040w3.pdf
LNC10R040W3/LND10R040W3/LNE10R040W3/LNB10R040W3 Lonten N-channel 100V, 120A, 4.0m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 100V DSS effect transistors are using split gate trench DMOS R GS DS(on).max@ V =10V 4.0m technology. This advanced technology has been I 120A D especially tailored to minimize on-state resistance, provi... See More ⇒
lnd10n60 lnc10n60 lne10n60 lnf10n60.pdf
LND10N60/LNC10N60/LNE10N60/LNF10N60 Lonten N-channel 600V, 10A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the VDSS 600V advanced planer VDMOS technology. The ID 10A resulting device has low conduction resistance, RDS(on),max 0.9 superior switching performance and high avalance Qg,typ 31.4 nC energy. Features Low RDS(on) Low gate ... See More ⇒
lnd10n65 lnc10n65 lne10n65 lnf10n65 lndn10n65.pdf
LND10N65/LNC10N65/LNE10N65/LNF10N65/LNDN10N65 Lonten N-channel 650V, 10A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the V 650V DSS advanced planer VDMOS technology. The I 10A D resulting device has low conduction resistance, R 1.0 DS(on),max superior switching performance and high avalanche Q 34.2 nC g,typ energy. Features Low R DS(on) ... See More ⇒
Detailed specifications: LNC07R085H, LNC08R055W3, LNC08R085, LNC08R160, LNC08R220, LNC10N60, LNC10N65, LNC10R040W3, AO3401, LNC12N60, LNC12N65, LNC13N50, LNC16N60, LNC16N65, LNC18N50, LNC20N60, LNC20N65
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