All MOSFET. LNC12N60 Datasheet

 

LNC12N60 MOSFET. Datasheet pdf. Equivalent


   Type Designator: LNC12N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 12 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 40.8 nC
   trⓘ - Rise Time: 37.6 nS
   Cossⓘ - Output Capacitance: 163 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm
   Package: TO-220

 LNC12N60 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

LNC12N60 Datasheet (PDF)

 ..1. Size:1044K  lonten
 lnd12n60 lnc12n60 lne12n60 lnf12n60.pdf

LNC12N60 LNC12N60

LND12N60/LNC12N60/LNE12N60/LNF12N60 Lonten N-channel 600V, 12A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the VDSS 600V advanced planer VDMOS technology. The ID 12A resulting device has low conduction resistance, RDS(on),max 0.75 superior switching performance and high avalance Qg,typ 40.8 nC energy. Features Low RDS(on) Low gate

 7.1. Size:1285K  lonten
 lnd12n65 lnc12n65 lne12n65 lnf12n65 lndn12n65.pdf

LNC12N60 LNC12N60

LND12N65/LNC12N65/LNE12N65/LNF12N65/LNDN12N65Lonten N-channel 650V, 12A Power MOSFETDescription Product SummaryThe Power MOSFET is fabricated using the V 650VDSSadvanced planer VDMOS technology. The I 12ADresulting device has low conduction resistance, R 0.8DS(on),maxsuperior switching performance and high avalanche Q 41.9 nCg,typenergy.Features Low RDS(on)

 7.2. Size:1032K  lonten
 lnd12n65 lnc12n65 lne12n65 lnf12n65.pdf

LNC12N60 LNC12N60

LND12N65/LNC12N65/LNE12N65/LNF12N65 Lonten N-channel 650V, 12A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the VDSS 650V advanced planer VDMOS technology. The ID 12A resulting device has low conduction resistance, RDS(on),max 0.8 superior switching performance and high avalanche Qg,typ 41.9 nC energy. Features Low RDS(on) Low gate

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: NCE0105M

 

 
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